PART |
Description |
Maker |
BR211-280 BR211 BR211-140 BR211-160 BR211-180 BR21 |
Breakover diodes 314 V, SYMMETRICAL BOD MOSFET N-CH 500V 3A TO-220 MOSFET N-CH 600V 2A TO-220 MOSFET N-CH 1.2KV 3A TO-220AB MOSFET N-CH 500V 1A TO-220
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd. ON Semiconductor
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JANTX2N6762 JANTXV2N6762 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
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IRF[International Rectifier]
|
IRC830 |
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A) Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
IRFP460 6179 -IRFP460 |
N-Channel 500V-0.22惟-20A- TO-247 PowerMESH MOSFET(N娌??MOSFET) N-Channel 500V-0.22Ω-20A- TO-247 PowerMESH MOSFET(N沟道MOSFET) N沟道500V -0.22Ω- 20A条至247 PowerMESH MOSFET的(不适用沟道MOSFET的) N-Channel Power MOSFET N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH TM MOSFET From old datasheet system N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET
|
IXYS, Corp. 意法半导 ST Microelectronics STMicroelectronics
|
2SK2793 A5800303 |
Switching (500V/ 5A) Switching (500V 5A) From old datasheet system Switching (500V, 5A)
|
ROHM[Rohm]
|
IRFR430B IRFU430B IRFR430BTM |
500V N-Channel B-FET / Substitute of IRFR430A 500V N-Channel MOSFET
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International Rectifier FAIRCHILD[Fairchild Semiconductor]
|
IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A) HEXFET? Power MOSFET Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A) Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 1.5ohm,身份证\u003d 3.1A
|
IRF[International Rectifier] International Rectifier, Corp.
|
APT5025BN APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
IRF840 IRF840PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A)
|
IRF[International Rectifier]
|
IRF820 IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)=3.0ohm/ Id=2.5A)
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IRF[International Rectifier]
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